data books, etc. contact sharp in order to obtain the latest version of the device specification sheets before using any sharp 's device. in the absence of confirmation by device specification sheets, sharp takes no responsibility for any defects that occur in equi pment using any of sharp's devices, shown in catalogs, PC3Q66Q PC3Q66Q n outline dimensions ( unit : mm ) n features n absolute maximum ratings ( ta = 25?c ) n applications n package specifications package specifications 1. high collector-emitter voltage 2. half pitch type ( lead pitch : 1.27mm ) 3. isolation voltage between input and output 4. applicable to infrared ray reflow 5. high reliability model no. c0.4 epoxy resin 6 ? internal connection diagram 9 8 1 12345678 9 1357 anode 2468 cathode 9 emitter collector soldering area 0.2mm or more parameter symbol rating unit input i f 50 ma i fm 1a reverse voltage v r 6v p70mw output collector-emitter voltage v ceo 80 v emitter-collector voltage v eco 6v collector current i c 50 ma p c 150 mw p tot 170 mw v iso 2.5 kv rms operating temperature t opr - 30 to + 100 ?c t stg - 40 to + 125 ?c t sol 260 ?c model no. PC3Q66Q 1. programmable controllers ( v ceo : 80v ) ( v iso *1 pulse width <=100 m s, duty ratio : 0.001 *2 ac for 1 min., 40 to 60% rh, f = 60hz *1 peak forward current power dissipation collector power dissipation total power dissipation *2 isolation voltage storage temperature *3 soldering temperature collector-emitter voltage forward current mini-flat package, high type half pitch photocoupler primary side mark : 2 500v rms ) ( 230?c for max. 30seconds ) taping reel diameter 330mm ( 1 000pcs. ) *3 for 10seconds 4.4 0.2 10.3 0.3 1.27 0.25 0.4 0.1 2.6 0.2 0.1 0.1 0.2 0.05 5.3 0.3 7.0 + 0.2 - 0.7 0.5 + 0.4 - 0.2 16 15 15 14 14 13 12 11 13 12 11 16 16 10 10
PC3Q66Q ( ta = 25?c ) parameter symbol conditions min. typ. max. unit input v f i f = 20ma - 1.2 1.4 v i r v r =4v - - 10 m a c t v = 0, f = 1kh z - 30 250 pf output i ceo v ce = 20v, i f = 0 - - 100 na bv ceo i c = 0.1ma, i f = 0 80 - - v bv eco i e =10 m a, i f =0 6 - - v transfer charac- collector current i c i f = 1ma, v ce =5v 1 - 4 ma v ce ( sat ) i f = 20ma, i c = 1ma - 0.1 0.2 v dc500v 40 to 60% rh 5 x 10 10 10 11 - w c f v = 0, f = 1 mh z - 0.6 1.0 pf response time rise time t r v ce = 2v, i c = 2ma r l = 100 w -6- fall time t f -8- n electro-optical characteristics reverse current collector dark current collector-emitter breakdown voltage emitter-collector breakdown voltage terminal capacitance collector-emitter saturation voltage isolation resistance floating capacitance teristics r iso m s m s 0 -30 10 0 25 5055 75 100 125 20 30 40 50 60 fig. 1 forward current vs. ambient temperature ambient temperature t a ( ?c ) forward current i f ( ma ) 70 0 100 80 60 40 20 0 50 55 100 fig. 2 diode power dissipation vs. ambient temperature -30 0 0 125 100 200 50 150 25 50 75 100 ambient temperature -30 ambient temperature t a ( ?c ) collector power dissipation p c ( mw ) fig. 3 collector power dissipation vs. - 30 0 25 50 75 100 0 50 100 150 200 250 170 ambient temperature fig. 4 power dissipation vs. ambient temperature t a ( ?c ) power dissipation p tot ( mw ) forward current diode power dissipation p ( mw ) 300 ambient temperature t a ( ?c )
PC3Q66Q duty ratio 5 5 pulse width <=100 m s 10 20 100 50 200 500 2 5 2 5 2 5 peak forward current i fm ( ma ) fig. 5 peak forward current vs. duty ratio 1 2 5 20 10 50 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25?c 0?c - 25?c 75?c forward voltage v f ( v ) forward current i f ( ma ) 1 10 100 0 100 200 300 400 500 current tranfer ratio ctr ( % ) forward current i f ( ma ) 0246 0 50 40 30 20 10 810 1ma 5ma 10ma 20ma collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 20406080100 0 50 100 150 relative current transfer ratio ( % ) -30 0.02 0 20406080100 0.00 0.04 0.06 0.08 0.10 0.12 0.14 0.16 -30 ambient temperature t a ( ?c ) collector-emitter saturation voltage v ce ( sat ) ( v ) fig. 6 forward current vs. forward voltage fig. 7 current tranfer ratio vs. forward current fig. 8 collector current vs. collector -emitter voltage fig. 9 relative current transfer ratio vs. ambient temperature fig.10 collector-emitter saturation voltage vs. ambient temperature ambient temperature t a ( ?c ) t a = 25?c 1 50?c i f = 30ma i f = 20ma i c = 1ma i f = 1ma v ce =5v v ce =5v t a = 25?c t a = 25?c 10 -3 10 -2 10 -1 10000 5000 2000 1000 pc (max)
PC3Q66Q 10 10 8 6 4 2 0 02468 1ma 3ma 5ma 7ma 04080 5 100 60 20 5 5 5 5 5 fig.11 collector dark current vs. ambient temperature 0.01 0.1 1 10 response time ( m s ) -30 500 200 100 50 20 10 5 2 1 0.5 0.2 0.1 fig.13 collector-emitter saturation voltage vs. forward current collector dark current i ceo ( a ) ambient temperature t a ( ?c ) collector-emitter saturation voltage v ce ( sat ) ( v ) forward current i f ( ma ) v ce = 20v v ce =2v i c = 2ma t a = 25?c t d t r t f t s t a = 25?c i c = 0.5ma 10 -5 10 -6 10 -7 10 -8 10 -9 10 -10 10 -11 1000 please refer to the chapter precautions for use load resistance r l ( k w ) fig.12 response time vs. load resistance l
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